Showing posts with label RFPA3800. Show all posts
Showing posts with label RFPA3800. Show all posts

RFPA3800

RFPA3800
GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER
Features

n 5W Output Power (P1dB)

n High Linearity: OIP3>48dBm

n High Efficiency

n Low Noise: NF=3.2dB at 945MHz

n 5V to 7V Operation

n Thermally Enhanced Slug Package

Applications

n GaAs Driver for Base Station Amplifiers

n PA Stage for Commercial Wireless Infrastructure

n Final Stage PA in Femtocell and Repeater Applications

n Final Stage PA in High Efficiency, High Power Applications

n Class AB Operation for LTE and GSM Transceiver Applications

RFPA3800
Product Description

The RFPA3800 is a single-stage GaAs HBT power amplifier specifically designed for high power, high efficiency applications. It is also well-suited for Wireless Infrastruc-ture linear power amplifier applications. The RFPA3800 can be optimized for linear or saturated operation by varying the quiescent bias point and load line. It also offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs. The RFPA3800 exhibits excellent thermal performance through the use of a ther-mally-enhanced plastic surface-mount slug package.

Absolute Maximum Ratings

Parameter
Rating
Unit
Supply Voltage (VCC and VBIAS) >300MHz
7.5
V
Supply Voltage (VCC and VBIAS) <300MHz
5.5
V
Reference Current (IREF)
10
mA
DC Supply Current (IC)
2300
mA
CW Input Power, 2:1 Output VSWR
28
dBm



CW Input Power, 5:1 Output VSWR
20
dBm



Output Load VSWR at P3db
5:1




Operating Junction Temperature
160
°C



Operating Temperature Range (TL)
-40 to +85
°C
Storage Temperature
-55 to +150
°C



ESD Rating: Human Body Model
Class 1B




Moisture Sensitvity Level
MSL 2



Parameter

Specification

Unit
Condition
Min.
Typ.
Max.



460MHz




VCC=7.0V, VBIAS=7.0V, ICQ =650mA
Frequency
450
460
470
MHz
EVB tuned for linear operation






Input Power (PIN)


23
dBm
VCC<7.5V, load VSWR<2:1
Gain (S21)

18

dB







OIP3

48

dBm
20dBm/tone, tone spacing=1MHz






P1dB

36.7

dBm
EVB tuned for linear operation






Efficiency at P3dB

50

%
At P3dB, EVB tuned for linear operation






Input Return Loss (S11)

15

dB







Output Return Loss (S22)

9

dB







Noise Figure

5

dB







WCDMA Ch Power at -65dBc ACPR

19.5

dBm
3GPP 3.5, Test Model 1, 64 DPCH






WCDMA Ch Power at -55dBc ACPR

24.5

dBm
3GPP 3.5, Test Model 1, 64 DPCH






945MHz




VCC=7.0V, VBIAS=7.0V, ICQ =650mA
Frequency
920
940
960
MHz
EVB tuned for linear operation






Input Power (PIN)


26
dBm
VCC<7.5V, load VSWR<2:1
Gain (S21)

15

dB
945MHz






OIP3

49

dBm
20dBm/tone, tone spacing=1MHz






P1dB

36

dBm
EVB tuned for linear operation






Efficiency at P3dB

45

%
At P3dB, EVB tuned for linear operation






Input Return Loss (S11)

12

dB







Output Return Loss (S22)

11

dB







Noise Figure

3.2

dB







WCDMA Ch Power at -65dBc ACPR

19.3

dBm
3GPP 3.5, Test Model 1, 64 DPCH






WCDMA Ch Power at -55dBc ACPR

23.7

dBm
3GPP 3.5, Test Model 1, 64 DPCH






Power Supply





Operating Current (Quiescent)
500
650
700
mA
At VCC=7.0V
Operating Voltage (VCC)

7.0
7.5
V
Max recommended collector voltage
Thermal Resistance (RTH)

11.5

C/W
At quiescent current, no RF
Power Down Current


20
mA
At VREF =0V.








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