GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER
Features
n 5W Output Power (P1dB)
n High Linearity: OIP3>48dBm
n High Efficiency
n Low Noise:
NF=3.2dB at 945MHz
n 5V to 7V Operation
n Thermally
Enhanced Slug Package
Applications
n GaAs Driver for
Base Station Amplifiers
n PA Stage for
Commercial Wireless Infrastructure
n
Final Stage PA in Femtocell and Repeater
Applications
n Final Stage PA
in High Efficiency, High Power Applications
n
Class AB Operation for LTE and GSM Transceiver
Applications
Product Description
The RFPA3800 is a single-stage GaAs HBT power amplifier specifically
designed for high power, high efficiency applications. It is also well-suited
for Wireless Infrastruc-ture linear power amplifier applications. The RFPA3800
can be optimized for linear or saturated operation by varying the quiescent
bias point and load line. It also offers low noise figure making it an
excellent solution for 2nd and 3rd stage LNAs. The RFPA3800 exhibits excellent
thermal performance through the use of a ther-mally-enhanced plastic
surface-mount slug package.
Absolute Maximum Ratings
|
Parameter
|
Rating
|
Unit
|
|
Supply Voltage (VCC and VBIAS) >300MHz
|
7.5
|
V
|
|
Supply Voltage (VCC and VBIAS) <300MHz
|
5.5
|
V
|
|
Reference
Current (IREF)
|
10
|
mA
|
|
DC Supply
Current (IC)
|
2300
|
mA
|
|
CW Input Power, 2:1 Output VSWR
|
28
|
dBm
|
|
|
|
|
|
CW Input Power, 5:1 Output VSWR
|
20
|
dBm
|
|
|
|
|
|
Output Load VSWR at P3db
|
5:1
|
|
|
|
|
|
|
Operating Junction Temperature
|
160
|
°C
|
|
|
|
|
|
Operating Temperature
Range (TL)
|
-40 to +85
|
°C
|
|
Storage Temperature
|
-55 to +150
|
°C
|
|
|
|
|
|
ESD Rating: Human Body Model
|
Class 1B
|
|
|
|
|
|
|
Moisture Sensitvity Level
|
MSL 2
|
|
|
Parameter
|
|
Specification
|
|
Unit
|
Condition
|
|
|
Min.
|
Typ.
|
Max.
|
||||
|
|
|
|
||||
|
460MHz
|
|
|
|
|
VCC=7.0V, VBIAS=7.0V, ICQ =650mA
|
|
|
Frequency
|
450
|
460
|
470
|
MHz
|
EVB tuned for linear operation
|
|
|
|
|
|
|
|
|
|
|
Input Power
(PIN)
|
|
|
23
|
dBm
|
VCC<7.5V, load VSWR<2:1
|
|
|
Gain (S21)
|
|
18
|
|
dB
|
|
|
|
|
|
|
|
|
|
|
|
OIP3
|
|
48
|
|
dBm
|
20dBm/tone, tone spacing=1MHz
|
|
|
|
|
|
|
|
|
|
|
P1dB
|
|
36.7
|
|
dBm
|
EVB tuned for linear operation
|
|
|
|
|
|
|
|
|
|
|
Efficiency at P3dB
|
|
50
|
|
%
|
At P3dB, EVB tuned for linear operation
|
|
|
|
|
|
|
|
|
|
|
Input Return Loss (S11)
|
|
15
|
|
dB
|
|
|
|
|
|
|
|
|
|
|
|
Output Return Loss (S22)
|
|
9
|
|
dB
|
|
|
|
|
|
|
|
|
|
|
|
Noise Figure
|
|
5
|
|
dB
|
|
|
|
|
|
|
|
|
|
|
|
WCDMA Ch Power at -65dBc
ACPR
|
|
19.5
|
|
dBm
|
3GPP 3.5, Test Model 1, 64 DPCH
|
|
|
|
|
|
|
|
|
|
|
WCDMA Ch Power at -55dBc
ACPR
|
|
24.5
|
|
dBm
|
3GPP 3.5, Test Model 1, 64 DPCH
|
|
|
|
|
|
|
|
|
|
|
945MHz
|
|
|
|
|
VCC=7.0V, VBIAS=7.0V, ICQ =650mA
|
|
|
Frequency
|
920
|
940
|
960
|
MHz
|
EVB tuned for linear operation
|
|
|
|
|
|
|
|
|
|
|
Input Power
(PIN)
|
|
|
26
|
dBm
|
VCC<7.5V, load VSWR<2:1
|
|
|
Gain (S21)
|
|
15
|
|
dB
|
945MHz
|
|
|
|
|
|
|
|
|
|
|
OIP3
|
|
49
|
|
dBm
|
20dBm/tone, tone spacing=1MHz
|
|
|
|
|
|
|
|
|
|
|
P1dB
|
|
36
|
|
dBm
|
EVB tuned for linear operation
|
|
|
|
|
|
|
|
|
|
|
Efficiency at P3dB
|
|
45
|
|
%
|
At P3dB, EVB tuned for linear operation
|
|
|
|
|
|
|
|
|
|
|
Input Return Loss (S11)
|
|
12
|
|
dB
|
|
|
|
|
|
|
|
|
|
|
|
Output Return Loss (S22)
|
|
11
|
|
dB
|
|
|
|
|
|
|
|
|
|
|
|
Noise Figure
|
|
3.2
|
|
dB
|
|
|
|
|
|
|
|
|
|
|
|
WCDMA Ch Power at -65dBc
ACPR
|
|
19.3
|
|
dBm
|
3GPP 3.5, Test Model 1, 64 DPCH
|
|
|
|
|
|
|
|
|
|
|
WCDMA Ch Power at -55dBc
ACPR
|
|
23.7
|
|
dBm
|
3GPP 3.5, Test Model 1, 64 DPCH
|
|
|
|
|
|
|
|
|
|
|
Power Supply
|
|
|
|
|
|
|
|
Operating Current (Quiescent)
|
500
|
650
|
700
|
mA
|
At VCC=7.0V
|
|
|
Operating
Voltage (VCC)
|
|
7.0
|
7.5
|
V
|
Max recommended collector voltage
|
|
|
Thermal
Resistance (RTH)
|
|
11.5
|
|
C/W
|
At quiescent current, no RF
|
|
|
Power Down Current
|
|
|
20
|
mA
|
At VREF =0V.
|
|
|
|
|
|
|
|
|
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